GaP crystal
- Brand: Eachwave
- Type: GaP-110-10
InP wafers are attracting much attention as a key component in optical fiber communications equipment. Specifically, the semi-insulating InP mirror wafer is expected to become the mainstream material for photodiodes used in a high-speed communications system with a transmission speed of 40 Gbps or higher. Demand for InP is also expected to grow for the use in the next-generation mobile phones which require communications with higher speed and larger capacity.
Pulse width of pump laser was 40ps, emitter is terahertz photoconductive antenna, detector is a [110] cut GaP crystal with 400um thickness
| Model number |
Orientation |
Size（mm） | Thickness(mm) |
|
GaP-110-10-0.05 |
<110>-cut |
10*10 | 0.05 |
|
GaP-110-10-0.1 |
<110>-cut |
10*10 | 0.1 |
|
GaP-110-10-0.3 |
<110>-cut |
10*10 |
0.3 |
|
GaP-110-10-0.4 |
<110>-cut |
10*10 |
0.4 |
|
GaP-110-10-0.5 |
<110>-cut |
10*10 |
0.5 |
|
GaP-110-10-1 |
<110>-cut |
10*10 |
1 |
|
GaP-110-10-2 |
<110>-cut |
10*10 |
2 |
|
GaP-110-10-2.5 |
<110>-cut | 10*10 | 2.5 |
|
GaP-110-10-10-0.1-3 |
GaP crystal with a thickness of 100μm optically contacted on GaP sustrate with a thickness of 3mm
|
||
|
GaP-110-10-10-0.3-3 |
GaP crystal with a thickness of 300μm optically contacted on GaP sustrate with a thickness of 3mm
|
||
--These GaP crystals with size 10mm*10mm could be mounted in 25.4mm ring holder
